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MBR(F,B)25H35CT thru MBR(F,B)25H60CT
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Vishay General Semiconductor
Revision: 27-Jun-12
2
Document Number: 88789
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Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ?
40 ms
Note
(1)
AEC-Q101 qualified
Peak non-repetitive reverse energy
(8/20 μs waveform)
ERSM
25 20 mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k?
VC
25 kV
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 65 to + 175 °C
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
ELECTRICAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS
MBR25H35CT
MBR25H45CT
MBR25H50CT
MBR25H60CT
UNIT
TYP. MAX. TYP. MAX.
Maximum instantaneous forward
voltage per diode
VF
(1)
IF
= 15 A
TJ
= 25 °C - 0.64 - 0.70
V
TJ
= 125 °C 0.50 0.54 0.56 0.60
IF
= 30 A
TJ
= 25 °C - 0.74 - 0.85
TJ
= 125 °C 0.63 0.67 0.68 0.72
Maximum reverse current per diode IR
(2)
Rated VR
TJ
= 25 °C - 100 - 100 μA
TJ
= 125 °C 6.0 20 4.0 20 mA
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
Thermal resistance, junction to case per diode R?JC
1.5 4.5 1.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR25H45CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF25H45CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB25H45CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB25H45CT-E3/81 1.35 81 800/reel Tape and reel
TO-220AB MBR25H45CTHE3/45 (1)
1.85 45 50/tube Tube
ITO-220AB MBRF25H45CTHE3/45 (1)
1.99 45 50/tube Tube
TO-263AB MBRB25H45CTHE3/45 (1)
1.35 45 50/tube Tube
TO-263AB MBRB25H45CTHE3/81 (1)
1.35 81 800/reel Tape and reel
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT
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